发明名称 |
SINGLE C-AXIS PGO THIN FILM ELECTRODE WITH SUPERIOR SMOOTH SURFACE AND UNIFORMITY AND ITS FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a (c) axis orientation single crystal PGO ferroelectric thin film whose thickness is uniform on a metal electrode. SOLUTION: This forming method is a method for forming an electrode and the ferroelectric thin film on the electrode, and consists of a process for forming a substrate and a process for depositing the electrode on the substrate. The electrode is formed of material obtained from material group composed of iridium and iridium composite. A process for forming the ferroelectric thin film includes a process wherein the film shows the smooth surface and uniform thickness. |
申请公布号 |
JP2003023139(A) |
申请公布日期 |
2003.01.24 |
申请号 |
JP20020081747 |
申请日期 |
2002.03.22 |
申请人 |
SHARP CORP |
发明人 |
ZHANG FENGYAN;MAA JER-SHEN;ZHUANG WEI WEI;SHIEN TEN SUU |
分类号 |
C23C14/08;C23C16/40;H01L21/02;H01L21/28;H01L21/31;H01L21/314;H01L21/316;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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