| 摘要 |
PROBLEM TO BE SOLVED: To reduce a current consumption by decreasing a leakage current of a memory cell of a semiconductor integrated circuit device such as, for example, an SRAM. SOLUTION: The semiconductor integrated circuit device comprises drive n-channel MISFETs (Qd1, Qd2) and load p-channel MOSFETs (Qp1, Qp2), each of which has an input unit and an output unit. The input unit and the output unit each has a pair of inverters cross connected to each other. Each of the n-channel MISFETs and the p-channel MOSFETs has gate gates (well 3: Ap1, Ap2, well 4: An1, An2) in which a power source potential and a ground potential are applied. The SRAM of the semiconductor integrated circuit device further comprises a gate electrode G and a source region of these MISFETs of the SRAM memory cell having metal silicide layers (shaded part) formed thereon, and a metal silicide layer formed on a drain region. As a result, the leakage current of the MISFET generated from a potential difference between the drain and the well can be reduced. |
