发明名称 THIN FILM SENSOR AND FLOW SENSOR AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To restrain etching of a thin film structure part which is caused by foreign matters in external environment, in a flow sensor having a thin film structure part. SOLUTION: The flow sensor is equipped with the thin film structure part 2 formed on a cavity part 6 of a substrate 1, a heater 3 and a temperature detector 5 which are formed in the thin film structure part 2, and a lead part 7 wherein one end is electrically connected with the heater 3 and the temperature detector 5 and the other end is led out as far as a part position except the thin film structure part 2 of the substrate 1. While heating and driving the heater 3, the flow sensor measures the flow rate of fluid on the basis of temperature change of the temperature detector 5 which is caused by flow of the fluid. The one end side of the lead part 7 has a form in which the lengthwise direction becomes the normal direction of constant temperature lines of temperature distribution generated in the thin film structure part 2.</p>
申请公布号 JP2003021547(A) 申请公布日期 2003.01.24
申请号 JP20010208014 申请日期 2001.07.09
申请人 DENSO CORP 发明人 WADO HIROYUKI;KONO YASUSHI
分类号 G01F1/692;G01N27/12;(IPC1-7):G01F1/692 主分类号 G01F1/692
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