| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having a MOSFET capable of realizing both hot carrier suppression and large current driving force, and to provide a manufacturing method therefor. SOLUTION: A T-shaped electrode 3 comprises a first gate electrode section 3a equivalent to a portion 'I' in a lower section, and a second gate electrode section 3b equivalent to a portion '-' in an upper section. First side wall spacers 7 and first side walls 8 are so formed as to be adjacent to the side walls of the electrode section 3a and as to be below the electrode section 3b. Below the side walls 8, one part of extension regions 15 is positioned through the spacers 7. The side walls 8 are formed of a high-permittivity material having a higher permittivity than that of a silicon oxide film.
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