| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for reducing a pulse delay phenomenon (gate leg in a GaAs-based semiconductor field effect transistor and improving transistor characteristics, such as gate withstand voltage controllability and noise characteristic, etc. SOLUTION: The GaAs-based semiconductor field effect transistor for controlling electron movement between a source electrode and a drain electrode by an input signal to a gate electrode includes an active layer composed of a GaAs-based semiconductor, the source electrode and the drain electrode formed on the active layer and the gate electrode provided on the active layer between the source electrode and the drain electrode, and the film thickness of an oxide of the GaAs-based semiconductor on the active layer is nearly equal to the lattice constant of the GaAs-based semiconductor.
|
