| 发明名称 |
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method for semiconductor device with which a metal silicide film having a flat and uniform surface can be formed by a simple method. SOLUTION: A polycrystal silicon film 803 is deposited on a semiconductor wafer 801. The surface of the polycrystal silicon film 803 is flattened by chemical machinery polishing. A high fusing point metal film 804 is deposited on the polycrystal silicon film 803, with which the surface is flattened. A metal silicide film 805 is formed by the reaction of the polycrystal silicon film 803 and the high fusing point metal film 804 by first heat treatment.
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| 申请公布号 |
JP2003022984(A) |
申请公布日期 |
2003.01.24 |
| 申请号 |
JP20020159343 |
申请日期 |
2002.05.31 |
| 申请人 |
SHARP CORP |
发明人 |
NAKANO MASAYUKI;IWATA HIROSHI |
| 分类号 |
H01L21/28;H01L21/20;H01L21/3205;H01L23/52;H01L29/78;(IPC1-7):H01L21/28;H01L21/320 |
主分类号 |
H01L21/28 |
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