| 摘要 |
PROBLEM TO BE SOLVED: To perform suitable working by means of chemical and mechanical polishing corresponding to the distribution of film thickness before working. SOLUTION: In the semiconductor production device for performing working by means of chemical and mechanical polishing by executing scan operation by relatively moving a wafer 2 and a pad 1 smaller than the wafer 2 all over the surface of the wafer 2, this device is provided with a working control unit 5 and a working condition setting part 6, for correcting and calculating a polishing quantity required for each of points on the wafer 2 from the film thickness distribution of the wafer 2 before working and working the wafer 2 by the pad 1 corresponding to the calculated corrected polishing quantity. |
