发明名称 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element which is usable as a unit block capable of reducing the ratio of the frequency dependency of an input impedance fluctuation amount and constituting a wide band amplifier, and to provide a semiconductor device using it. SOLUTION: The semiconductor element is used in a power amplifier, the unit block is constituted by connecting in parallel two FETs 10a and 10b and a source grounding via hole 11a shared by the connected FETs 10a and 10b connected in parallel, inside the unit block is provided. Also, a capacitance element 15d is provided at the center part of a line 13a which is the input synthesis circuit of the two FETs 10a and 10b connected in parallel, and one end of the capacitance element 15d is connected to the source grounding via hole 11a.
申请公布号 JP2003023088(A) 申请公布日期 2003.01.24
申请号 JP20010208118 申请日期 2001.07.09
申请人 TOSHIBA CORP 发明人 SHIZUKI YASUSHI
分类号 H01L21/822;H01L21/338;H01L27/04;H01L29/812;(IPC1-7):H01L21/822 主分类号 H01L21/822
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