| 摘要 |
PROBLEM TO BE SOLVED: To prevent a new illegal command from being executed in auto precharge operation in a semiconductor memory device. SOLUTION: This apparatus is provided with an internal cas command signal generator 100 for generating an internal cas command signal CASI <0:3> corresponding to a row active peri signal ROWACT- PE disabling a word line, a burst length counter 200 for generating a burst end signal YBST- END representative of an end of a burst operation, an auto precharge signal generator 300 for generating an auto precharge peri signal APCG- PE and an auto precharge core signal APCG- CO, and an internal row active signal generator 400 for generating the row active peri signal ROWACT- PE disabling the word line and the row active core signal ROWACT- CO.
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