BURST READ WORD LINE BOOSTING

摘要

A burst read mode operation is provided that boosts the voltage of a word line (12) while the bit lines of the row are selected for reading. When the column group address bits (35) read the last column group of cells in the row, a pulse signal (96) is generated which temporarily reduces the boosted voltage to allow the X-decoder (14) to select the next work line. An alternative delay element (100) is also provided which generates an ATD pulse (64) with a longer duration when the column group address bits (35) are at the end of a row and a shorter duration pulse at other times.