| 摘要 |
PURPOSE: A gate of a semiconductor device and a method for forming the same are provided to restrain contamination and oxidation of a tungsten layer by preventing the exposure of the tungsten layer. CONSTITUTION: A gate oxide layer(202) is formed on a semiconductor substrate(200). The first poly layer(204) is formed on the gate oxide layer(202). An etch stop layer(206) is formed on the first poly layer(204) under atmospheric pressure within the same chamber. The second poly layer(208) is formed on the etch stop layer(206) under low temperature within the same chamber. A trench is formed to expose a surface of the etch stop layer(206). The first TiN layer(210) is formed on the inside of the trench and the second poly layer(208). A tungsten layer(212) is formed on the third TiN layer(210) within the trench. The second TiN layer(214) is formed on the tungsten layer(212) and the first TiN layer(210).
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