| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device and a capacitor thereof are provided to increase the height of a lower electrode and improve capacitance by providing a stopping layer including the first silicon nitride layer, a buffer layer, and the second silicon nitride layer. CONSTITUTION: An interlayer dielectric(32) having a contact hole(34) is formed on a semiconductor substrate(30). A plug is inserted into a contact hole. A stopping layer(44) including the first silicon nitride layer(38), a buffer layer(40), and the second silicon nitride layer(42) is formed on an entire surface of the semiconductor substrate(30). A sacrificial layer(46) is formed on the stopping layer(44). The stopping layer(44) is removed by etching the stopping layer(44). A conductive layer(50) is formed thereon. An upper interlayer dielectric is formed on the semiconductor substrate(30). A lower electrode is formed by polishing the upper interlayer dielectric. The upper interlayer dielectric and the sacrificial layer are removed by etching the semiconductor substrate(30). A dielectric layer(52) and an upper electrode(54) are formed on the semiconductor substrate(30).
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