发明名称 Polysilicon film forming method
摘要 There is provided the step of forming a polysilicon film by scanning a laser irradiation region while irradiating a continuous wave laser onto an amorphous silicon film formed into an island or ribbon-like shape on a substrate. If a width of a rectangle in which the amorphous silicon film is inscribed is 30 mum or less, any one condition of (1) a top end shape of a pattern is a convex shape, (2) a top end shape is a concave shape and consists of straight lines and has three corner portions at a top end side, and both angles of the corner portions on both sides of the top end shape are set to 45 degree or more, (3) a top end shape is a concave shape and consists of curved lines, and (4) a width of a top end portion is 25 mum or less, is satisfied.
申请公布号 US2003017659(A1) 申请公布日期 2003.01.23
申请号 US20020037492 申请日期 2002.01.03
申请人 FUJITSU LIMITED 发明人 TAKEI MICHIKO;HARA AKITO
分类号 H01L21/20;C30B1/00;G02F1/136;H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/84 主分类号 H01L21/20
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