Semiconductor arrangement comprises a substrate with an electrically active region, an insulating region, an electrically conducting region, an electrically conducting supply lead, an auxiliary strip conductor and a highly doped region

摘要

Semiconductor arrangement comprises a substrate (101) with an electrically active region; an insulating region (105) made from a dielectric arranged on the electrically active region; an electrically conducting region arranged on the insulating region; an electrically conducting supply lead connected to the electrically conducting region; an auxiliary strip conductor arranged next to the supply lead; and a highly doped region with doping atoms of a first conductivity connected to the strip conductor. An Independent claim is also included for the production of a semiconductor arrangement. Preferably the device also comprises a source region (102) of a field effect element; and a drain region (103) of a field effect region. An active region is arranged between the source and drain regions and forms a channel region (104). The electrically conducting region forms a gate region of a field effect element.