发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, CMP DEVICE AND METHOD
摘要 <p>PURPOSE: To protect the pad electrodes of a highly integrated semiconductor device against surface oxidation so as to provide the semiconductor device which is high in bonding strength to outer terminals. CONSTITUTION: A semiconductor device is equipped with a pad electrode connected to an outer electrode and a multiplayer wiring structure connected to the pad electrode, where an insulating film provided with an opening to make the surface of the pad electrode exposed is formed covering the pad electrode, and the one surface of the insulating film is brought into contact with a metal surface of noble metal material selected out of noble metal and metal which contains the noble metal as a main component.</p>
申请公布号 KR20030007370(A) 申请公布日期 2003.01.23
申请号 KR20020087042 申请日期 2002.12.30
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HARADA SHIGERU;IZUMITANI JUNKO;TAKATA YOSHIFUMI
分类号 H01L23/52;H01L21/304;H01L21/3205;H01L21/60;H01L23/485 主分类号 H01L23/52
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