| 摘要 |
A MOS transistor including a gate poly oxide layer formed to have different thicknesses over the entire surface of a semiconductor substrate and a method for forming the MOS transistor are provided. A gate oxide layer pattern and a gate conductive layer pattern are formed on a semiconductor substrate. A mask layer pattern is formed on the semiconductor substrate and the gate conductive layer pattern so that the gate conductive layer pattern is completely covered with the mask layer pattern. The semiconductor substrate is made to be amorphous using the mask layer pattern. The mask layer pattern is removed and then a gate poly oxide layer is deposited over the entire surface of the semiconductor substrate. A gate spacer layer is deposited on the gate poly oxide layer and gate spacers are formed by anisotropically etching the gate spacer layer and the gate poly oxide layer. A source/drain region is formed on the semiconductor substrate. Accordingly, it is possible to prevent damage to the semiconductor substrate, such as pitting of the semiconductor substrate, and reduce an increase in junction leakage current introduced by the occurrence of pitting. In addition, it is possible to thinly form a junction region and improve the performance of the MOS transistor.
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