发明名称 Method for analyzing failure of semiconductor integrated circuit and failure
摘要 A fault analysis method and apparatus which is able to improve the reliability of fault analysis of semiconductor integrated circuit. In case of supplying a test pattern sequence having a plurality of test patterns to the semiconductor IC, an analysis point whose electric potential changes according to the change of supplied test pattern is placed corresponding to the test pattern sequence. Then, a transient power supply current generated on the semiconductor IC according to the change of the test pattern is measured and determined whether the measured transient power supply current is abnormal or not. A defection point is presumed based on the test pattern sequence where the transient power supply current is abnormal, and the analysis point placed corresponding to the test pattern sequence.
申请公布号 US2003016044(A1) 申请公布日期 2003.01.23
申请号 US20010980891 申请日期 2001.12.03
申请人 ISHIDA MASAHIRO;YAMAGUCHI TAKAHIRO;HASHIMOTO YOSHIHIRO 发明人 ISHIDA MASAHIRO;YAMAGUCHI TAKAHIRO;HASHIMOTO YOSHIHIRO
分类号 G01R31/26;G01R31/02;G01R31/28;G01R31/30;G01R31/3181;(IPC1-7):G01R31/26 主分类号 G01R31/26
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