发明名称 Semiconductor memory systems, methods, and devices for controlling active termination
摘要 An integrated circuit memory device for use in a memory system receives predetermined command/address signals from a memory controller and reads and writes data in response to the command/address signals. The memory device includes at least one input/output terminal that inputs/outputs data from/to the memory controller via a data input/output bus, at least one termination resistor, and an active termination control signal generator that generates a control signal to control active termination of the at least one data input/output terminal in response to a chip selection signal from the memory controller. The memory device also includes at least one switch coupled in series with the at least one termination resistor between the at least one input/output terminal and a predetermined voltage wherein the at least one switch is switched on/off in response to the control signal such that the at least one input/output terminal is connected/disconnected to/from the predetermined voltage responsive to the control signal and such that the at least one termination resistor is coupled in series between the predetermined voltage and the at least one input/output terminal when the at least one switch is switched on and such that the at least one input/output terminal is decoupled from the predetermined voltage when the at least one switch is switched off. Related memory systems and methods are also discussed.
申请公布号 US2003016550(A1) 申请公布日期 2003.01.23
申请号 US20020199857 申请日期 2002.07.19
申请人 YOO CHANG-SIK;KYUNG KYE-HYUN 发明人 YOO CHANG-SIK;KYUNG KYE-HYUN
分类号 G06F12/00;G11C7/10;G11C11/4093;(IPC1-7):G11C5/06 主分类号 G06F12/00
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