METHOD OF FORMING VIA METAL LAYER AND VIA METAL LAYER−FORMED SUBSTRATE

摘要

A method of forming a via metal layer characterized by comprising the via forming step of forming a plurality of vias reaching an SiO2 film in an Si film by etching an SOI substrate having sequentially the SiO2 film and the Si film on an Si substrate, and the via metal layer forming step of forming a plurality of via metal layers in the plurality of vias.