| 摘要 |
PURPOSE: A thin film transistor display device and a method for fabricating the same are provided to reduce the resistivity of channel areas and the contact resistance between sources/drains and a lower amorphous silicon layer, thereby increasing the mobility of charges and reducing power consumption. CONSTITUTION: A thin film transistor display device includes gate electrodes(2) positioned at a part on a glass substrate(1), a gate insulating film(3) positioned on the entire surface on the glass substrate including the gate electrodes, an amorphous silicon layer(4) on the gate electrodes and the gate insulating film facing the gate electrodes, a n- amorphous silicon layer(9) doped with n type impurities of low concentration on the amorphous silicon layer, an n+ amorphous silicon layer(5) doped with n type impurities of high concentration on the environmental parts except the central portion of the n- amorphous silicon layer, sources and drains(6) respectively positioned on the n+ amorphous silicon layer, a passivation film(7) on the entire surface of the structure, and pixel electrodes(8) connected to the drains via contact holes of the passivation film.
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