Tunable radiation source providing a VUV wavelength planar illumination pattern for processing semiconductor wafers

摘要

A radiation source constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode having a two dimensional surface bounding one side of a radiation emitting region. An ionizable, excimer gas is present in the radiation emitting region. The excimer gas, when energized, emits radiation in the UV and/or VUV wavelengths. A two dimensional dielectric radiation transmissive layer bounds an opposite side of the radiation emitting region and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer and a protective radiation transmissive window is a two dimensional matrix or screen electrode defining a plane generally parallel to the two dimensional surface of the base electrode region. A power supply coupled to the base and matrix electrodes to energize the electrodes and the eximer gas causing emission of UV and/or VUV radiation. The range of wavelengths transmitted to the wafer treatment region can be "tuned" by using a filter disposed adjacent to the protective window which functions to block transmission of selected wavelengths of emitted radiation.