DOUBLE-SIDED SEMICONDUCTOR STRUCTURE

摘要

A semiconductor structure includes a monocrystalline silicon substrate (4102), a buffer or interfacial layer (4104) including an amorphous oxide material overlying the monocrystalline silicon substrate on a first side of the semiconductor structure and a monocrystalline perovskite oxide (4106) material overlying the amorphous oxide material on the first side of the semiconductor structure, and a monocrystalline compound semiconductor material (4108) overlying the monocrystalline perovskite oxide material on the first side of the semiconductor structure. The semiconductor structure further includes compound semiconductor devices (4122) formed in the monocrystalline compound semiconductor material on the first side of the semiconductor structure and silicon devices (4120) formed on a second side of the semiconductor structure.