SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to be capable of preventing an internal power supply voltage for array from being overshot over a predetermined voltage level. CONSTITUTION: An internal power supply voltage generator circuit(100) generates an internal power supply voltage(VCCA) lower than an external power supply voltage(EVC). The internal power supply voltage(VCCA) is supplied to a load circuit(120) that charges a bit line connected to a memory cell. An overshoot limiting circuit(140) is connected to an output terminal(130) of the internal power supply voltage generating circuit(100). The overshoot limiting circuit(140) discharges charges corresponding to an excessively increased voltage, when the internal power supply voltage(VCCA) of a voltage supply line(130). The overshoot limiting circuit(140) consists of diode-connected NMOS transistors.