| 摘要 |
PURPOSE: To obtain a positive type photoresist composition which meets all properties of sensitivity, resolution, short margin and pattern shapes even in forming a resist pattern as superfine as not greater than half a micron, a novolak resin suitable for the above composition, and to provide its manufacturing method. CONSTITUTION: First, m-cresol is compounded with propionaldehyde in the presence of an acid catalyst, and the primary reaction is carried out to synthesize a polymer having an Mw of 200-500, and simultaneously, a degree of dispersion (Mw/Mn) of <=1.7, and then the above polymer is compounded with 3,4- xylenol and formaldehyde, and the secondary reaction is carried out to synthesize a novolak resin having an Mw of 1,000-20,000. This novolak resin is compounded with a specific photosensitive component to obtain the positive type photoresist composition.
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