发明名称 |
EXPOSURE METHOD FOR WAFER EDGE IN SEMICONDUCTOR FABRICATION PROCESS |
摘要 |
PURPOSE: An exposure method for a wafer edge in a semiconductor fabrication process is provided to increase exposure efficiency at the edge of a wafer and eliminate the remnants at the wafer edge or flat zone by performing a heat treatment process like a post exposure bake(PEB) process before the exposure process is performed on the wafer edge. CONSTITUTION: Photoresist liquid is applied by using a wafer coater. A pattern is exposed by using an exposure apparatus. A heat treatment process is performed to eliminate a standing wave occurring in an interface between an exposure portion and a non-exposure portion of the photoresist liquid. The temperature of the wafer is decreased. An exposure process is performed to eliminate the applied photoresist liquid remaining on the wafer edge or flat zone by using the exposure apparatus regarding the wafer edge. A development process is performed after the exposure process.
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申请公布号 |
KR20030005496(A) |
申请公布日期 |
2003.01.23 |
申请号 |
KR20010040810 |
申请日期 |
2001.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE, JAE HYEON;KIM, MUN U;LEE, JE CHEOL;PARK, GYEONG SIN |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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地址 |
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