| 摘要 |
A method of fabricating a semiconductor device includes burying Cu wiring with an insulating interlayer film and a first insulating film for preventing diffusion of copper on a planarized surface, including the Cu wiring, of which copper is the uppermost layer, and with a second insulating film having high moisture resistance. A photosensitive polyimide material is applied to the insulating film, exposed, and developed, thereby forming an etching mask. The etching mask is cured. Using the cured etching mask, the insulating films are etched to expose the Cu wiring as the uppermost layer.
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