发明名称 Full wafer silicon probe card for burn-in and testing, method of fabrication and test system including same
摘要 A full wafer probe card, a method for making the probe card and a full wafer testing system. The probe card includes test probes comprising cantilever elements configured and arranged with probe tips in a pattern corresponding to an array of bond pads of semiconductor dice residing on a device wafer. The probe card is desirably fabricated of the same material, such as silicon, as the device wafer to be tested. The cantilever elements may be fabricated from the material of the probe card substrate using known silicon micro-machining techniques including isotropic and anisotropic etching. Additionally, conductive feedthroughs or vias are formed through the probe card to electrically connect the probe tips with conductive pads on an opposing side of the substrate which interface with test contacts of external test circuitry. The conductive feedthroughs may be formed as coaxial structures, which help to minimize stray capacitance and inductance. The inventive probe card allows for wafer level burn-in and high frequency testing allowing for greater efficiency in properly identifying known good die at the wafer level.
申请公布号 US2003016036(A1) 申请公布日期 2003.01.23
申请号 US20010908212 申请日期 2001.07.19
申请人 AHN KIE Y.;ELDRIDGE JEROME M.;FORBES LEONARD 发明人 AHN KIE Y.;ELDRIDGE JEROME M.;FORBES LEONARD
分类号 G01R31/28;(IPC1-7):G01R31/02 主分类号 G01R31/28
代理机构 代理人
主权项
地址