| 摘要 |
992,729. Semi-conductor devices. MULLARD Ltd. Aug. 22, 1962, No. 32255/62. Heading H1K. In a method of alloying material to an area of a semi-conductor body the body 1, Fig. 1, and two amounts 6, 7 of material are placed at different locations in the jig with said area 2 inclined to the horizontal. After heating to melt the first amount the jig is tilted to the position shown with the area horizontal to allow amount 6 to flow on to it. Subsequently the jig is tilted further when the second amount 7 is molten to run it into an intermediate position D from which it flows to the area when the jig is returned to the position shown. In a typical method, the jig for which is shown in Figs. 2 and 3, an indium pellet 23 and N-type germanium wafer 19 are positioned as shown and the remaining parts of the jig assembled about them. The jig parts are located by dowels 15 and held together by clips 16 provided with a spindle (not shown) for tilting. An indium pellet and an indiumgermanium-aluminium pellet are placed at opposite ends X, A of contoured U-shaped channel 4, 5. After heating in hydrogen to remove oxide layers from the pellets the temperature is reduced to 400‹ C. and the jig tilted forward 45 degrees to the position shown. This allows the pellet at X to reach the wafer via channel 3 and the other pellet to reach B. After 30 seconds alloying the jig is tilted forward 45 degrees so that the other pellet reaches C and then returned to the position shown to allow the pellet to run downhill to the wafer. 30 seconds later the jig is inverted, and indium pellet 23 falls on the wafer and is alloyed to it. Specification 907,568 is referred to. |
