Method of manufacturing a semiconductor memory device with a gate dielectric stack

摘要

A method of manufacturing a semiconductor memory device with a gate dielectric stack is provided. A first insulating layer is formed on a semiconductor substrate with a first conductive type. A first conductive layer is formed on the first insulating layer. A second insulating layer with a stack of silicon dioxide/silicon nitride/silicon oxynitride/silicon dioxide is formed on the first conductive layer. A second conductive layer is formed on the second insulating layer. Patterning the first insulating layer, the first conductive layer, the second insulating layer and the second conductive layer to form a first gate dielectric layer, a floating gate, a second gate dielectric layer and a control gate. A source/drain with a second conductive type beside the floating gate is formed in the semiconductor substrate.