发明名称 |
ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS HAVING A GATE CONTACT ON A GALLIUM NITRIDE BASED CAP SEGMENT AND METHODS OF FABRICATING SAME |
摘要 |
High electron mobility transistors (HEMTs) and methods of fabricating HEMTs are provided Devices according to embodiments of the present invention include a gallium nitride (GaN) channel layer and an aluminum gallium nitride (AlGaN) barrier layer on the channel layer. A first ohmic contact is provided on the barrier layer to provide a source electrode and a second ohmic contact is also provided on the barrier layer and is spaced apart from the source electrode to provide a drain electrode. A GaN-based cap segment is provided on the barrier layer between the source electrode and the drain electrode. The GaN-based cap segment has a first sidewall adjacent and spaced apart from the source electrode and may have a second sidewall adjacent and spaced apart from the drain electrode. A non-ohmic contact is provided on the GaN-based cap segment to provide a gate contact. The gate contact has a first sidewall which is substantially aligned with the first sidewall of the GaN-based cap segment. The gate contact extends only a portion of a distance between the first sidewall and the second sidewall of the GaN-based cap segment. |
申请公布号 |
WO03007383(A2) |
申请公布日期 |
2003.01.23 |
申请号 |
WO2002US09398 |
申请日期 |
2002.03.26 |
申请人 |
CREE, INC. |
发明人 |
SMITH, RICHARD, PETER |
分类号 |
H01L21/28;H01L21/338;H01L29/20;H01L29/423;H01L29/778;H01L29/812 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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