发明名称 |
Fabrication of semiconductor device by depositing first interlayer dielectric film on semiconductor wafer, partially removing the first film and depositing second interlayer dielectric film on the first film |
摘要 |
A semiconductor device is made by: (a) depositing a first interlayer dielectric film on a semiconductor wafer with an isolation insulating film and gates; (b) performing a sputtering etch entirely on a surface of the first dielectric film; (c) partially removing the first dielectric film through isotropic etching; and (d) depositing a second interlayer dielectric film on the first dielectric film. Fabrication of a semiconductor device includes; (a) forming an isolation insulating film on a semiconductor wafer and forming gates separated by gaps of a predetermined distance on an active region; (b) depositing a first interlayer dielectric film having a predetermined thickness on the wafer with the gates (120), so that the gaps between the gates are not completely filled; (c) performing a sputtering etch entirely on a surface of the first dielectric film; (d) partially removing the first dielectric film through isotropic etching; and (e) depositing a second interlayer dielectric film on the first dielectric film, so that the gaps between the gates are completely filled.
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申请公布号 |
DE10230088(A1) |
申请公布日期 |
2003.01.23 |
申请号 |
DE2002130088 |
申请日期 |
2002.07.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, WOO-CHAN;LEE, JONG-KOO |
分类号 |
H01L21/31;H01L21/3105;H01L21/316;H01L21/768;H01L21/8234;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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