| 摘要 |
<p>The present invention provides a method of preparing a Si-based metal-insulator-semiconductor (MIS) transistor which prevents the polycrystalline grains of the gate conductor from getting significantly larger by reducing the thermal budget of the sidewall oxidation process. A transistor structure comprising a silicon substrate (10) coated by a gate dielectric layer (12) having a polysilicon gate (14) formed thereon is submitted to an oxidation process to form the sidewall (16). The thermal budget of the inventive sidewall oxidation process is reduced one or two orders of magnitude over conventional prior art sidewall oxidation processes by utilizing atomic oxygen as the oxidizing ambient. The present invention also provides Si-based MIS transistors having a gate conductor having grain sizes of about 0.1, preferably 0.05, νm or less.</p> |
