发明名称 |
SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A semiconductor device and peeling off method and a method of manufacturing the semiconductor device are provided to peel off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. CONSTITUTION: The metal layer or nitride layer(11) is formed on the substrate. The oxide layer(12) that is contact with the foregoing metal layer or nitride layer is provided, and if the lamination film formation or the heat processing of 500 C. or more in temperature is performed, it can be easily and clearly separated in the layer or on the interface with the oxide layer by the physical means. |
申请公布号 |
KR20030007208(A) |
申请公布日期 |
2003.01.23 |
申请号 |
KR20020041570 |
申请日期 |
2002.07.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
MARUYAMA JUNYA;MIZUKAMI MAYUMI;TAKAYAMA TORU;YAMAZAKI SHUNPEI |
分类号 |
H01L29/786;G02F1/13357;G02F1/1368;G09F9/00;G09F9/30;H01L21/02;H01L21/20;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L51/50;H05B33/02;H05B33/04;H05B33/10 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|