| 摘要 |
A light emitting element having a GaN layer and a light emitting layer formed on a substrate. A GaN layer is formed on a substrate so as to form a Ga-based light emitting layer. An AlGaN layer having a refractive index smaller than that of the light emitting layer or Al composition larger than that of the light emitting layer (18) is formed between the GaN layer (14) and the light emitting layer (18). Light from the light emitting layer (18) is reflected at the boundary relative to the AlGaN layer (16), so that light absorption in the GaN layer (14) is suppressed.
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