发明名称 Apparatus for fabricating a semiconductor device
摘要 An apparatus for an apparatus for fabricating a semiconductor device comprising: an electrically grounded reactor for providing a reaction space sealed from the outer atmosphere; a susceptor for settling a wafer and arranged within the reactor to prevent electric connection to the reactor; a plasma electrode provided around the upper part of the reactor; an RF power supply electrically connected to the susceptor and the plasma electrode to provide RF power to the same; and an RF relay for applying the RF power supplied from the RF power supply to at least one of the susceptor and the plasma electrode. According to the apparatus, the optimal plasma atmosphere can be easily generated for a certain process without any additional plasma electrode. Furthermore, cleaning around the susceptor can be efficiently carried out by using the susceptor as a plasma electrode.
申请公布号 US2003015292(A1) 申请公布日期 2003.01.23
申请号 US20010913665 申请日期 2001.08.16
申请人 HWANG CHUL JU;SHIM KYUNG SIK 发明人 HWANG CHUL JU;SHIM KYUNG SIK
分类号 C23C16/44;C23C16/505;H01J37/32;(IPC1-7):C23F1/00;C23C16/00 主分类号 C23C16/44
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