发明名称 |
BARRIER REMOVAL AT LOW POLISH PRESSURE |
摘要 |
The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials. |
申请公布号 |
WO03006205(A2) |
申请公布日期 |
2003.01.23 |
申请号 |
WO2002US22126 |
申请日期 |
2002.07.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TSAI, STAN, D.;LI, SHIJIAN;LIU, FENG, Q.;SUN, LIZHONG;CHEN, LIANG-YUH;MORAD, RATSON |
分类号 |
B24B37/04;B24B49/16;C09G1/02;H01L21/321 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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