| 摘要 |
The present invention provides a monolithic piezoelectrically-tunable optoelectronic device structure which includes an epitaxial piezoelectric material (206) that is monolithically integrated with an optical device (210), such as a laser structure or a photodetector structure for example. In alternate embodiments, the epitaxial piezoelectric material may be monolithically integrated either above or below the active layer of the optical device or may be positioned adjacent to the optical device. A vertical cavity surface emitting laser diode which monolithically integrates a piezoelectric thin-film exhibits high tunability and improved performance. |
