Method for manufacturing a semiconductor memory device e.g. as FeRAM store, requires semiconductor substrate, passivation zone and/or surface zone formed on it with CMOS structure

摘要

A method for manufacturing a semiconductor storage device, in which a semiconductor substrate or similar, a passivation zone (21) and/or a surface zone (20a, 21a) are formed on it with a CMOS structure and in which in the region of the semiconductor substrate (20) a passivation zone (21) and/or a surface zone (20a, 21a) on it are formed a capacitor arrangement (2) of capacitor devices (10-1...10-4) serving as storage elements. At least one part of the capacitor devices (10-1...10-4) are formed with a number of mutually-parallel connected discrete capacitors (C1,C2).