SELECTIVE EPITAXIAL GROWTH METHOD AND BIPOLAR TRANSISTOR FABRICATED THEREBY

摘要

PURPOSE: A selective epitaxial growth method is provided to obtain a low etch rate in an HF solution and increase process yield by selectively growing a silicon layer and/or a silicon germanium layer on a silicon containing substrate, and to have low stress. CONSTITUTION: The silicon containing substrate is provided with a layer(4) of silicon oxynitride with an atomic concentration of oxygen between 30 percent and 45 percent and an atomic concentration of nitrogen between 19 percent and 35 percent before the selective epitaxial growth of the silicon-containing layer(8).