| 摘要 |
PURPOSE: To reduce contact resistance by efficiently performing the suppression of a damage layer and the removal of a high resistance layer to be formed on a base silicon wafer or wiring layer in contact hole formation. CONSTITUTION: A contact hole is formed by an etching process for reducing ion energy and an O2 flow rate with the progress of etching depth, and the damage layer to be formed on the base is suppressed. Then, by introducing a high resistance layer removing process using hydrogen or gas plasma containing hydrogen, contact resistance can be reduced. |
