METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY REMOVING SELECTIVELY CARBON NANO TUBE

摘要

PURPOSE: A method for fabricating a semiconductor device by removing selectively a carbon nano tube is provided to fabricate easily the semiconductor device by removing only a metallic nano tube. CONSTITUTION: A carbon nano tube grows between a source and a drain. A positive gate voltage is applied to a device including the source, the drain, and the carbon nano tube. A voltage-current curve between the source and the drain is measured according to the applied gate voltage. The voltage-current curve between the source and the drain is measured according to a variation of the gate voltage. A device having the changed voltage-current curve between the source and the drain is selected. The positive gate voltage is applied to the selected device. A metallic nano tube is heated and removed selectively by applying the positive gate voltage to the selected device and increasing the amount of current applied between the source and the drain.