发明名称 Multichip semiconductor device
摘要 A multichip semiconductor device with an improved yield and a reduced inspection cost is provided in which a fuse is provided on a first semiconductor chip while a fuse is not provided on a second semiconductor chip as a rewritable memory, and these chips are connected inside a package. The second semiconductor chip includes redundancy cells to be replaced for defective bits. To produce a post-redundancy-restoration state in which the defective bits are replaced with the redundancy cells before the second semiconductor chip is connected with the first semiconductor chip, the second semiconductor chip includes a restoration state determining circuit and a command decode circuit. The restoration state determining circuit is for storing a redundancy restoration solution for restoring defective bits supplied via a first external input pad. The command decoder circuit controls input from the first external input pad to the restoration state determining circuit according to a signal supplied via a second external input pad.
申请公布号 US2003015733(A1) 申请公布日期 2003.01.23
申请号 US20020194593 申请日期 2002.07.11
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO.,LTD. 发明人 HAYASHI KOHTARO;SHIRAHAMA MASANORI
分类号 G06F12/16;G11C29/00;G11C29/04;H01L23/525;H01L25/065;(IPC1-7):H01L21/44;H01L23/02;H01L27/10 主分类号 G06F12/16
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