| 摘要 |
The transistors share the sameness in the areas of gate oxide films 2a and 2b, and in those of the side surfaces of sixth metal wiring layers 15a and 15b to be exposed in a metallization patterning process by a plasma process such as plasma etching and the like in order to form the uppermost layer. For this reason, the transistors share the sameness in antenna ratio. The pairing transistors are suffered from the damage of the same level induced by plasma transmitted from the side surfaces of sixth metal wiring layers 15a and 15b to gate oxide films 2a and 2b.
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