The invention relates to a transistor cell, characterized in that for the individual transistors of said transistor cell a heat dissipation adapted to the temperature conditions of the cell in operation is provided. Heat dissipation can for example be specifically reduced for the transistors at the edge of a cell which are colder so that they reach the same temperature as the transistors in the center of the cell which are hotter. This can be achieved without substantially increasing the temperature of the hottest transistors.
