| 摘要 |
<p>High electron mobility transistors (HEMTs) and methods of fabricating HEMTs are provided Devices according to embodiments of the present invention include a gallium nitride (GaN) channel layer and an aluminum gallium nitride (AlGaN) barrier layer on the channel layer. A first ohmic contact is provided on the barrier layer (16) to provide a source electrode (18) and a second ohmic contact is also provided on the barrier layer (16) and is spaced apart from the source electrode (18) to provide a drain electrode (20). A GaN-based cap segment (30) is provided on the barrier layer (16) between the source electrode (18) and the drain electrode (20). The GaN-based cap segment (30) has a first sidewall (31) adjacent and spaced apart from the source electrode (18) and may have a second sidewall (32) adjacent and spaced apart from the drain electrode (20). A non-ohmic contact is provided on the GaN-based cap segment (30) to provide a gate contact (22). The gate contact (22) has a first sidewall (27) which is substantially aligned with the first sidewall (31) of the GaN-based cap segment (30). The gate contact (22) extends only a portion of a distance between the first sidewall (31) and the second sidewall (32) of the GaN-based cap segment (30).</p> |
