| 摘要 |
PURPOSE: To provide a semiconductor integrated circuit device in which the boosting speed of an internal potential is quick and which includes a boosting circuit being able to suppress the power consumption. CONSTITUTION: When a boosting stage increment indicating signal VWWP1 is on L level, a transistor QP55 in an auxiliary boosting circuit 501 is turned on, transistors QP56 and QP57 are turned off. Therefore, three boosting stage B1-B3 in the auxiliary boosting circuit 501 boost supply potential VWDP. On the other hand, when the boosting stage increment indicating signal VWWP1 is in a H level, four boosting stages B1-B4 in the auxiliary boosting circuit 501 boost the supply potential VWDP.
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