发明名称 |
POSITIVE RESIST COMPOSITION |
摘要 |
PURPOSE: To provide a positive resist composition which can be suitably used for microphotofabrication using far-UV rays, in particular, ArF excimer laser light and which is free of patterns fall and has excellent properties relating to the surface roughening during etching and to the defocus latitude. CONSTITUTION: The positive resist composition contains (A) a specified resin which has specified aliphatic cyclic hydrocarbon groups in the side chains and increases the dissolving rate with an alkali developer by the effect of an acid and (B) a compound which produces an acid by irradiation of active rays or radiation. The proportion of the repeating unit corresponding to acrylic monomers in the resin (A) is characteristically in a specified range.
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申请公布号 |
KR20030006967(A) |
申请公布日期 |
2003.01.23 |
申请号 |
KR20020027321 |
申请日期 |
2002.05.17 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
SATO KENICHIRO |
分类号 |
C08F220/18;C08F220/28;G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 |
主分类号 |
C08F220/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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