发明名称 MANUFACTURING SEMICONDUCTOR LASERS HAVING GRATINGS
摘要 <p>When manufacturing semiconductor lasers having an internal grating (5), such as DFB or DBR lasers, the facets (7) generally have an arbitrary position in relation to the grating. This varying position of a critical one of the facets results in the fact that many of the lasers obtain far from optimum performance. In order to obtain far from optimum performance. In order to obtain good optical performance a distance layer (23) is applied directly to the critical facet. The distance layer has a thickness adapted to the phase of light generated in the laser, in particular to the phase at the facet, thereby producing a desired reflection of the light in the distance layer to give the laser good performance.</p>
申请公布号 WO2003007443(A1) 申请公布日期 2003.01.23
申请号 SE2002001282 申请日期 2002.06.28
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址