| 摘要 |
<p>High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (142) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (144) is lattice matched to the overlying monocrystalline material layer. In addition, formation of a compliant substrate may include utilizing a monocrystalline oxygen-doped material layer (146). The monocrystalline oxygen-doped material layer may prevent contamination of the accommodating buffer layer and may facilitate isolation of devices formed in the overlying monocrystalline material. Further, the monocrystalline oxygen-doped materials may be highly resistive and could reduce or eliminate backgating and sidegating effects.</p> |
