| 摘要 |
Test structures for a high voltage MOSFET are provided that includes a substrate of a first conductivity type. An epitaxial layer also of the first conductivity type is deposited on the substrate. A plurality of trenches are located in the drift region of the epitaxial layer. The trenches, which extend toward the substrate from the first and second body regions, are filled with a material that includes a dopant of the second conductivity type. The dopant is diffused from the trenches into portions of the epitaxial layer adjacent the trenches. The test structures allow the simultaneous optimization of the breakdown voltage and on-resistance of the device. |
